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| ON Semiconductor ) NPN Complementary Silicon Plastic Power Transistors . . . designed for use in general-purpose amplifier and switching applications. 2N6487 2N6488 * 2N6490 2N6491* *ON Semiconductor Preferred Device PNP * DC Current Gain Specified to 15 Amperes -- * * * hFE = 20-150 @ IC = 5.0 Adc = 5.0 (Min) @ IC = 15 Adc Collector-Emitter Sustaining Voltage -- VCEO(sus) = 60 Vdc (Min) - 2N6487, 2N6490 = 80 Vdc (Min) - 2N6488, 2N6491 High Current Gain -- Bandwidth Product fT = 5.0 MHz (Min) @ IC = 1.0 Adc TO-220AB Compact Package 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS 75 WATTS II I IIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIII II II I I II I I I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I I II II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII III I III IIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII III I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS (1) Rating Symbol VCEO VCB VEB IC IB PD PD 2N6487 2N6490 60 70 2N6488 2N6491 80 90 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current 5.0 15 5.0 Collector Current -- Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 75 0.6 Watts W/_C Watts W/_C _C 1.8 0.014 TJ, Tstg -65 to +150 4 1 2 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR 3 CASE 221A-09 TO-220AB THERMAL CHARACTERISTICS Characteristic Symbol RJC RJA Max 70 Unit Thermal Resistance, Junction to Case 1.67 _C/W _C/W Thermal Resistance, Junction to Ambient (1) Indicates JEDEC Registered Data. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2002 1 April, 2002 - Rev. 10 Publication Order Number: 2N6487/D 2N6487 2N6488 2N6490 2N6491 TA TC 4.0 80 PD, POWER DISSIPATION (WATTS) 3.0 60 TC 2.0 40 TA 1.0 20 0 0 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (C) Figure 1. Power Derating http://onsemi.com 2 II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Small-Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%. (2) fT = |hfe| * ftest. *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS Current-Gain -- Bandwidth Product (2) (IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 MHz) Base-Emitter On Voltage (IC = 5.0 Adc, VCE = 4.0 Vdc) (IC = 15 Adc, VCE = 4.0 Vdc) Collector-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.5 Adc) (IC = 15 Adc, IB = 5.0 Adc) DC Current Gain (IC = 5.0 Adc, VCE = 4.0 Vdc) (IC = 15 Adc, VCE = 4.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 65 Vdc, VEB(off) = 1.5 Vdc) (VCE = 85 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (1) (IC = 200 mAdc, VBE = 1.5 Vdc) Collector-Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) Characteristic 2N6487 2N6488 2N6490 2N6491 http://onsemi.com 2N6487, 2N6490 2N6488, 2N6491 2N6487, 2N6490 2N6488, 2N6491 2N6487, 2N6490 2N6488, 2N6491 2N6487, 2N6490 2N6488, 2N6491 2N6487, 2N6490 2N6488, 2N6491 VCEO(sus) VCE(sat) VBE(on) Symbol VCEX ICEO IEBO ICEX hFE hfe fT Min 5.0 20 5.0 25 70 90 60 80 -- -- -- -- -- -- -- -- -- -- -- Max 150 -- 500 500 5.0 5.0 1.3 3.5 1.3 3.5 1.0 1.0 1.0 -- -- -- -- -- mAdc mAdc Adc MHz Unit Vdc Vdc Vdc Vdc -- -- 3 2N6487 2N6488 2N6490 2N6491 VCC + 30 V 25 s + 10 V 0 - 10 V tr, tf v 10 ns DUTY CYCLE = 1.0% 51 RB D1 -4V RC SCOPE t, TIME (ns) 1000 500 200 100 50 20 10 0.2 NPN PNP TC = 25C VCC = 30 V IC/IB = 10 0.5 2.0 1.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 20 td @ VBE(off) [ 5.0 V tr RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. FOR PNP, REVERSE ALL POLARITIES. D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA Figure 2. Switching Time Test Circuit Figure 3. Turn-On Time r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 ZJC (t) = r(t) RJC RJC = 1.67C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) 5.0 10 20 50 P(pk) 0.1 0.07 0.05 0.03 0.02 0.01 0.01 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k t1 t, TIME (ms) Figure 4. Thermal Response 20 IC, COLLECTOR CURRENT (AMP) 10 5.0 2.0 1.0 0.5 0.2 0.1 100 s 500 s 1.0 ms TJ = 150C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C CURVES APPLY BELOW RATED VCEO 2N6487, 2N6490 2N6488, 2N6491 2.0 5.0 ms dc 4.0 40 60 10 20 80 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) There are two limitations on the power handling ability of a transistors average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown Figure 5. Active-Region Safe Operating Area http://onsemi.com 4 2N6487 2N6488 2N6490 2N6491 5000 1000 700 ts 1000 t, TIME (ns) 500 200 100 50 0.2 0.5 tf NPN PNP VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 20 C, CAPACITANCE (pF) 300 200 Cib Cob Cob 100 70 50 0.5 NPN PNP TJ = 25C 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 Figure 6. Turn-Off Time Figure 7. Capacitances http://onsemi.com 5 2N6487 2N6488 2N6490 2N6491 NPN 2N6487, 2N6488 500 TJ = 150C 200 hFE, DC CURRENT GAIN 100 50 20 10 5.0 0.2 VCE = 2.0 V hFE, DC CURRENT GAIN 25C -55C 200 100 50 20 10 10 20 5.0 0.2 VCE = 2.0 V 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 20 25C -55C TJ = 150C 500 PNP 2N6490, 2N6491 0.5 5.0 1.0 2.0 IC, COLLECTOR CURRENT (AMP) Figure 8. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 5.0 10 20 IC = 1.0 A 4.0 A TJ = 25C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 5.0 10 20 50 100 200 500 1000 IB, BASE CURRENT (mA) 2000 5000 IC = 1.0 A 4.0 A 8.0 A TJ = 25C 8.0 A 50 100 200 500 1000 IB, BASE CURRENT (mA) 2000 5000 Figure 9. Collector Saturation Region 2.8 2.4 V, VOLTAGE (VOLTS) 2.0 1.6 1.2 0.8 0.4 0 0.2 VBE(sat) = IC/IB = 10 VBE @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (AMP) TJ = 25C V, VOLTAGE (VOLTS) 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (AMP) TJ = 25C Figure 10. "On" Voltages http://onsemi.com 6 2N6487 2N6488 2N6490 2N6491 PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA -T- B 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 F T S C Q 123 A U K H Z L V G D N STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR R J http://onsemi.com 7 2N6487 2N6488 2N6490 2N6491 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 2N6487/D |
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